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Better precursors are required for plasma enhanced chemical vapor deposition of amorphous silicon and silicon carbide in order to prepare solar cells and optoelectronic materials. Silylmethanes, in which the central C atom is bonded exclusively to Si atoms, are particularly promising. Tetrasilylmethane (4) has now been synthesized from phenylchlorosilane (1) via intermediates 2 and 3. SiC bond cleavage in the last step affords, in addition, trisilylmethane. equation image
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Hager et al. (1990) studied this question.
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