Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
December 29, 2003Applied Physics Letters

Millimeter wave emission from GaN high electron mobility transistor

View Full Paper
Ask AI
Bookmark
Share

Authors

YDYanqing DengUniversity of AlbertaRKR. KerstingCenter for NanoScienceJXJingzhou XuState Grid Corporation of China (China)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Deng et al. (2003) studied this question.

synapsesocial.com/papers/6a9fc97a37a2f8dc0e61883fhttps://doi.org/10.1063/1.1638625
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor2002 · 211 citations
  2. 2Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current1993 · 1,183 citations
  3. 3Monte Carlo calculation of velocity-field characteristics of wurtzite GaN1997 · 317 citations
  4. 4Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid1996 · 1,041 citations
  5. 5Low ballistic mobility in submicron HEMTs2002 · 252 citations