Full-wave modeling of linear FETs for millimeter waves

Current monolithic-microwave integrated-circuit design, involving frequencies far in the millimeter and sub-millimeter ranges, is faced with the problem of the distributed nature of the devices. In this paper, we introduce a full-wave approach to the modeling of FETs under the small-signal hypothesis. The method is applied to MESFETs and pseudomorphic high electron-mobility transistors of different topologies and validated by comparison with available experimental data.