Reduced Metal Contamination in Atomic-Layer-Deposited HfO[sub 2] Films Grown on Si Using O[sub 3] Oxidant Generated Without N[sub 2] Assistance

The physicochemical and electrical properties of atomic-layer-deposited films grown using generated with and without assistance were examined. Compared to the films grown using conventionally generated with assistance, the film grown using generated without assistance had less metal impurities (mainly Cr) possibly due to the etching of stainless ozone delivery line. This induced a higher physical density of the film and a lower Si concentration in the film, which resulted in enhanced dielectric properties and reliability such as dielectric breakdown and resistance to constant voltage stress.