The effect of plasma charging in thin gate oxide was studied under both polarities of Fowler-Nordheim (F-N) charge injection. The authors found that, although plasma induced oxide charge was temporarily removed, it reappears after F-N current injection. The results reveal that electron traps are created in nMOSFETs, whereas hole traps are created in pMOSFET due to the plasma etching in the process.
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Li et al. (1994) studied this question.
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