Enhanced photoluminescence by resonant absorption in Er-doped SiO2/Si microcavities

Si/SiO2 Fabry–Perot microcavities with an Er-implanted SiO2 active region resonant at the Er excitation wavelength of 980 nm have been realized. Room-temperature photoluminescence measurements reveal that the Er luminescence intensity increases by a factor of 28 as compared to a structure without cavity enhancement. We show that the experimental enhancement of the luminescence intensity agrees with theory if optical absorption of the 980 nm light in the Si layers of the cavity and reduced mirror reflectivities are taken into account.