Wavelength demultiplexing heterojunction phototransistor

Experimental and theoretical results on a wavelength demultiplexing receiver composed of an AlGaAs/GaAs heterojunction phototransistor (HPT) integrated within a resonant cavity are reported. A high quality factor cavity was formed using a very thin In0.05Ga0.95As active absorption layer in the collector depletion region of the HPT. Crosstalk attenuations of 15dB for dual and 12dB for triple wavelength demultiplexing were demonstrated. The individual HPTs had an optical gain of 500 at the resonant modes. Theoretical calculations predict crosstalk attenuation levels as high as 40 dB with high reflection mirrors on both ends of the cavity.