What does this research mean for the field?

Femtosecond laser processing induces Si-N bond dissociation and Si enrichment in LPCVD-SiN, increasing the local refractive index and enabling precise, stable post-fabrication resonance trimming of photonic devices. Novelty: ClaimNovelty.INCREMENTAL. Consensus alignment: ConsensusAlignment.NEUTRAL.

What question did this study set out to answer?

To investigate dose-dependent microstructural changes in LPCVD silicon nitride induced by femtosecond laser irradiation and demonstrate contactless post-fabrication resonance trimming of microring resonators.

September 8, 2026Optics & Laser TechnologyOpen Access

Femtosecond laser modification of LPCVD-SiN photonic devices: microstructural evolution and post-fabrication trimming

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Authors

JDJia Du WJWenbing Jiang BZBoyu Zhang

Discussion

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Overview

Experimental study demonstrates permanent trimming of silicon nitride microring resonators via laser processing, highlighting a contactless method to correct photonic device mismatches.

Key Points

To investigate dose-dependent microstructural changes in LPCVD silicon nitride induced by femtosecond laser irradiation and demonstrate contactless post-fabrication resonance trimming of microring resonators.
Irradiated LPCVD silicon nitride waveguide cores through an upper silicon dioxide cladding using an 800 nm, 40 fs laser, tuning the accumulated dose via scanning speed.
Characterized microstructural transformations, elemental distribution, and bonding modifications using Raman spectroscopy, transmission electron microscopy, and energy-dispersive spectroscopy.
Evaluated trimming resolution, excess optical loss, and long-term resonance stability following localized laser re-annealing in single, second-order, and parallel-coupled microring resonators.
Femtosecond laser irradiation induced silicon-nitrogen bond dissociation, silicon enrichment, and formed amorphous and nanocrystalline silicon, increasing the effective refractive index and red-shifting resonance wavelengths.
Device calibration demonstrated a trimming resolution of less than 0.1 nm with approximately 0.15 dB of excess insertion loss.
Localized laser re-annealing constrained long-term resonance drift to below 20 pm over 30 days while successfully correcting resonance mismatches in multi-ring configurations and multiplexing devices.

Cite This Study

Du et al. (2026) studied this question.

synapsesocial.com/papers/6a9fd75858e84d0ff5b45f2b https://doi.org/10.1016/j.optlastec.2026.116323

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September 8, 2026Optics & Laser TechnologyOpen Access

Femtosecond laser modification of LPCVD-SiN photonic devices: microstructural evolution and post-fabrication trimming

View Full Paper

Ask AI

Bookmark

Authors

JDJia Du WJWenbing Jiang BZBoyu Zhang

Discussion

Member takes

Overview

Experimental study demonstrates permanent trimming of silicon nitride microring resonators via laser processing, highlighting a contactless method to correct photonic device mismatches.

Key Points

To investigate dose-dependent microstructural changes in LPCVD silicon nitride induced by femtosecond laser irradiation and demonstrate contactless post-fabrication resonance trimming of microring resonators.
Irradiated LPCVD silicon nitride waveguide cores through an upper silicon dioxide cladding using an 800 nm, 40 fs laser, tuning the accumulated dose via scanning speed.
Characterized microstructural transformations, elemental distribution, and bonding modifications using Raman spectroscopy, transmission electron microscopy, and energy-dispersive spectroscopy.
Evaluated trimming resolution, excess optical loss, and long-term resonance stability following localized laser re-annealing in single, second-order, and parallel-coupled microring resonators.
Femtosecond laser irradiation induced silicon-nitrogen bond dissociation, silicon enrichment, and formed amorphous and nanocrystalline silicon, increasing the effective refractive index and red-shifting resonance wavelengths.
Device calibration demonstrated a trimming resolution of less than 0.1 nm with approximately 0.15 dB of excess insertion loss.
Localized laser re-annealing constrained long-term resonance drift to below 20 pm over 30 days while successfully correcting resonance mismatches in multi-ring configurations and multiplexing devices.

Cite This Study

Du et al. (2026) studied this question.

synapsesocial.com/papers/6a9fd75858e84d0ff5b45f2b https://doi.org/10.1016/j.optlastec.2026.116323

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