Analysis of InP epitaxial films, grown on (100)Si substrates by metal-organic vapour-phase epitaxy, is performed including measurements of the surface topography, X-ray diffraction, and TEM investigations both in plan-view and in high resolution. Twin lamellae, small-angle grain boundaries, and dislocations at the substrate-film interface as well as within the InP layer are identified as the main deficiencies of the grown crystal. As demonstrated by the density of the twin-lamellae which decreases by three orders of magnitude towards the epitaxial-layer surface the crystal quality markedly improves during growth.
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Bugiel et al. (1992) studied this question.
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