March 6, 2003Electronics Letters

High efficiency long wavelength VCSEL on InP grown by MOCVD

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Authors

NNNobuhiko NishiyamaTokyo Institute of Technology CCC. CaneauUniversity of Notre Dame GGG. M. Gur’yanovD. Serikbayev East Kazakhstan State Technical University

Abstract

High efficiency continuous-wave operation of 1.53 µm vertical cavity surface emitting lasers (VCSELs) with buried tunnel junction grown by metal organic chemical vapour deposition (MOCVD) has been demonstrated. Devices show a high differential quantum efficiency of 46% and a singlemode power of 1 mW. Minimum threshold current and voltage are 0.45 mA and 1.3 V at room temperature, respectively for devices of 5 µm diameter.

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Nishiyama et al. (2003) studied this question.

synapsesocial.com/papers/6a9ff0ab20bdbf3a879c99de https://doi.org/10.1049/el:20030288

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High efficiency long wavelength VCSEL on InP grown by MOCVD

Abstract

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Cite This Study

High efficiency long wavelength VCSEL on InP grown by MOCVD

Abstract

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