Improved 1.55 µm InGaAlAs/InP vertical-cavity surface-emitting lasers were fabricated in the buried tunnel junction technology yielding sub-mA threshold currents, 0.9 V threshold voltage, 10–40 Ω series resistance, output power up to 7 mW (20°C, CW) and CW operation up to > 110°C.
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Shau et al. (2001) studied this question.
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