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Wafer-fused InGaAlAs/AlGaAs vertical cavity surface emitting lasers with InAlGaAs-based tunnel junction injection have shown record high 0.7 mW singlemode output power in the 10–80°C temperature range. Single transverse-mode operation with 35 dB sidemode suppression and low divergence beam with 9° half width at half maximum has been measured on devices with 7 µm aperture.
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Syrbu et al. (2004) studied this question.
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