Answers are grounded in this paper and cite their sources.
A tunnel junction for intradevice contacts on GaSb substrates has been realized. By using solid source molecular beam epitaxy, we have fabricated abrupt, heavily doped homo- and heterojunctions of InAs(Sb) and GaSb to form a low resistive ohmic tunnel junction. The resitivity achieved was as low as 2.6×10−5Ωcm2.
No takes yet. Share an insight, caveat, or question.
Dier et al. (2004) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: