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Results obtained from a computed gain–frequency response of an IMPATT amplifier, operating at 9.0 GHz with active reactance compensation, are reported. Measured values of the impedance of an impatt device, at an r.f. level of + 10 dBm and a direct current of 60 mA, are used. At 16 dB gain, the −1 dB bandwidth improves from 240 to 1450 MHz and from 110 to 560 MHz for the unencapsulated and encapsulated diode amplifiers, respectively.
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Aitchison et al. (1976) studied this question.
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