Epitaxial lift-off (ELO) techniques were employed in the fabrication of InP/InGaAs vertical surface light emitting diodes and resonant cavity enhanced photodetectors on Si. External mirrors were employed consisting of Si/SiO2 quarter wave dielectric stacks. The main peak in the emission spectrum of the fabricated device has an FWHM of 8 nm. The spectral response of the photodetector shows wavelength selectivity, and with an InGaAs absorbing layer only 0.1 µm thick a peak quantum efficiency of 0.48 was obtained in the 1.5 µm spectral region.
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Salvador et al. (1994) studied this question.
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