A newly introduced maskless planar buried heterostructure regrowth has substantially improved the regrown heterointerface of a 1.3 μm GaInAsP/InP circular buried heterostructure surface emitting laser. The threshold current of the 12 μmφ device was reduced to 2.2 mA at 77 K under CW conditions.
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Baba et al. (1993) studied this question.
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