The diffusivity of positively charged hydrogen (H⁺) in GaAs has been directly determined from capacitance transient measurements. The hydrogen was released from donor-hydrogen complexes in the space charge layer of Schottky diodes on n-type GaAs by pulsed-laser injection of minority carriers. Capacitance-voltage measurements reveal the recovery of donor dopants after the injection, which demonstrates minority-carrier-enhanced dissociation of a donor-hydrogen complex in GaAs. Analysis of capacitance transients recorded during migration of H⁺ were analyzed to obtain diffusivities near room temperature; at 320 K the diffusivity is {~}1×{}10^-12 cm²/sec, within a factor of 2. An Arrhenius analysis of the migration time constant yields an activation energy for H⁺ diffusion of {~}0.66 eV.
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Johnson et al. (1993) studied this question.
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