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A monolithic matched, two-stage wideband amplifier with an insertion gain of 26dB and a — 3dB bandwidth of 3-2GHz is reported. Optimally designed cascode circuits are used to enhance the gain-bandwidth product available per stage. The IC has been fabricated in a Iμ depletion GaAs MESFET technology.
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Colleran et al. (1987) studied this question.
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