In this work, we have studied the dominant transport mechanism in an Au/InSb/InP diode. The InP (n) substrate is restructured with some monolayers of an InSb thin film. The structures have been characterized electrically and the C ( V ) and I ( V ) curves have been plotted. The saturation current , the serial resistance and the mean ideality factor n were calculated using the I ( V ) characteristics and are respectively equal to , and 1.7. Thus, the doping level and diffusion voltage were deduced from the C ( V ) curves and are evaluated to and . The analysis of I ( V ) and C ( V ) characteristics allows us to determine that the mean interfacial density of states and the transmission coefficient are respectively equal to and . The presence of deep discrete donor levels in the semiconductor bulk and/or the distributed density of states is responsible for the nonlinearity of the characteristic because the C ( V ) curve is controlled by two donor levels located at 0.76 eV and 1.02 eV relative to the conduction band edge .
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Akkal et al. (1999) studied this question.
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