Fluorine-doped indium oxide thin films prepared by chemical vapor deposition

Transparent conductive fluorine-doped indium oxide thin films were prepared by an atmospheric-pressure chemical vapor deposition method. The raw material was [C7H15COO]2 In[H(CF2)4COO]. The polycrystalline films were obtained at a reaction temperature in the range of 350–450 °C. This chemical vapor deposition method incorporates fluorine atoms into a crystalline structure and consequently leads to a high carrier concentration, yielding fluorine-doped indium oxide films of low resistivity. For the 320-nm-thick film deposited at 380 °C, the resistivity was 4.4×10−4 Ω cm, and the sheet resistance was 13.8 Ω/⧠.