Indium-tin oxide thin films prepared by chemical vapor deposition

Transparent conductive indium-tin oxide thin films were prepared by an atmospheric-pressure chemical vapor deposition method. The source materials were indium acetylacetonate and tin (II) acetylacetonate which are nontoxic and easy to handle. The polycrystalline films were obtained at a reaction temperature in the range of 350–500 °C. For the 215-nm-thick film deposited at 450 °C, the resistivity was 1.8 × 10−4 Ω cm, and the transmittance was more than 90% in the wave number range of above 400 nm. The atomic ratio Sn/In of the film was 0.031. The effects of tin doping on the structure and characteristics of the film were discussed on the basis of the carrier concentration and mobility which were measured by using the Hall effect.