Experimental study demonstrates 8 W power at 10 GHz in undoped AlGaN/GaN transistors on silicon, suggesting a viable route for efficient high-frequency radio-frequency applications.
X‐band power performance in AlGaN/GaN high electron mobility transistors (HEMTs) on silicon without intentional carbon (C) or iron (Fe) doping anywhere in the stack is reported. A reverse polarization‐graded AlGaN buffer depletes background charge and provides a superior breakdown, while an optimized AlN nucleation layer reduces substrate radio frequency (RF) losses. HEMTs with 0.22 μm gate length and 4 μm source‐drain spacing demonstrate >80 V 3‐terminal breakdown voltage for 12 × 125 μm gate width. Pulsed load‐pull at 10 GHz shows 8 W saturated power at 2 dB compression under deep class‐AB bias at 35 V with 46% drain efficiency. Further improvements are expected with substrate thinning and improved thermal management.
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Shuvro et al. (2025) studied this question.
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