The surface electronic structures of Si(111)(√3×√3)-Al are investigated with the use of angle-resolved electron-energy-loss spectroscopy. Three new surface one-electron transitions (in specular reflection) are found at 1.8, 7.2, and 13.1 eV. Compared with the surface state band structures calculated by Northrup and STM results by Hamers and Demuth, the loss peak at 1.8 eV is ascribed to the one-electron transition between the occupied and unoccupied surface state bands which originate from the Al adatoms. The other two peaks are considered to be due to the Si-Si strained back bonds.
No takes yet. Share an insight, caveat, or question.
Li et al. (1991) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: