SIMS and DLTS measurements have been carried out on Fe-doped InP epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD). Fe was doped with ferrocene Fe(C5H5)2 and smoothly distributed in the epitaxial layers. The solubility limit of Fe is 7×1016 cm-3 at a growth temperature of 650°C. A new electrically active defect was observed in InP doped with the excess concentration of Fe over the solubility limit.
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Takanohashi et al. (1988) studied this question.
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