Experimental investigations of Gunn oscillations in planar-type devices of InP which is grown on GaAs substrates by a vapour phase epitaxy are described. The average threshold field for oscillation defined by the threshold voltage divided by the diode length ranges from 6 to 13 kV/cm. Spiked current waveforms associated with the transit of high-field domain are observed in the devices of a length 125 µm. The peak to valley ratio of current oscillation has been observed to come up to 2.1 even in the material grown on the semi-insulating GaAs substrate.
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Murayama et al. (1974) studied this question.