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In this study, the epilayers of gallium nitride light-emitting diode grown by metallorganic chemical vapor deposition on the stripe-patterned sapphire substrate prepared by chemical wet etching were characterized. The stripe pattern on vertical surface transferred by wafer bonding and laser lift-off techniques from the patterned sapphire substrate contributes much stronger photoluminescence intensity.
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Lee et al. (2008) studied this question.
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