The distribution in depth of boron ions implanted into silicon crystals has been measured using the French `CAMECA' ion microprobe analyser. Two problems associated with the technique, namely the normalization of the curves and the appearance of a tail on the deeper side of the gaussian, have been studied. The technique provides a rapid and simple procedure for profiling, and determines values of projected range which show good agreement with other techniques.
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Gittins et al. (1972) studied this question.