Growth Characteristics of Alpha-Silicon Carbide

The equilibrium partial pressures of various vapor species in the system silicon‐carbon‐hydrogen were computed for conditions under which epitaxial deposition has been achieved. It was found that in the temperature range 1300°–1700°C the tendency to form solid silicon carbide decreases with increasing temperature and with increasing silicon to carbon atom ratio. The limiting conditions under which single crystalline deposits of could be experimentally obtained were those within which was computed to be the only thermodynamically stable solid phase. At 1650° single‐phase silicon carbide condenses at ratios ranging from 0.2 to 0.89. The computed results were in good agreement with experiments.