Investigation on antireflection coating for high resistance to potential-induced degradation

In this study, we focus on the relationship between potential-induced degradation (PID) and characteristics of antireflection coating (ARC) on crystalline silicon solar cells. We evaluated the PID of general industrial multicrystalline p-type silicon solar cell groups with various ARCs. The module, which has an ARC deposited by plasma-enhanced chemical vapor deposition (PE-CVD) using a hollow cathode, indicated high resistance to PID with maintained conventional refractive index (RI). This ARC had properties of high conductivity and low oxygen concentration. It has the potential to suppress PID on crystalline silicon solar cells with maintained conventional RI.