Effects of plasma treatments on the back-channel of amorphous (GIZO) thin film transistors (TFTs) are compared for and plasma. Acceptor-like states originating from the oxygen adsorbed on the back-channel of the GIZO TFTs suppress the back-channel current by capturing the electrons in the GIZO active layer and thus shift the threshold voltage to the positive direction. It is also shown that the oxygen in a silicon oxide passivation layer reduces the back-channel current. An enhancement-mode GIZO TFT has been successfully fabricated by combining the plasma treatment and the silicon oxide passivation layer.
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Son et al. (2008) studied this question.
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