Experimental Comparison of a Direct Matrix Converter Using Si IGBT and SiC MOSFETs

This paper presents an analytical and experimental comparison between silicon insulated gate bipolar transistors and silicon carbide MOSFETs when used in a direct ac-ac matrix converter (MC) circuit. The switching performance of the two devices is analyzed and the efficiency/losses are measured in order to develop a loss model that will help engineers to design and develop MC circuits using these types of devices. Particular attention is given in this paper to the discrepancies found between the datasheet values and the measured data. The electromagnetic interference (EMI) performance of the two MCs is also determined, and the implication of using high-speed devices from both an EMI and an efficiency point of view is formulated together with an improved input filter design.