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August 2, 1990Electronics Letters

High efficiency (1.2 mW/mA) top-surface-emitting GaAs quantum well lasers

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Authors

YLY.H. LeeAT&T (United States)BTB. TellAT&T (United States)KBK. Brown-GoebelerAT&T (United States)

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Lee et al. (1990) studied this question.

synapsesocial.com/papers/6aa14a15cab39939783c73d7https://doi.org/10.1049/el:19900841
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