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Enhancing non-volatile memory and neuromorphic computing: integration of PRAM and OTS for scalable, energy- efficient architectures Seoyoung Park, Minsuk Koo and Sungjun Kim - An extremely fast, energy-efficient RESET process in Ge 2 Sb 2 Te 5 phase change memory device revealed by the choice of electrode materials and interface effects Suresh Durai, Srinivasan Raj and Anbarasu
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Longo et al. (2020) studied this question.
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