Etching Characteristics for Organosilica

Organosilica etching characteristics are described. The organosilica films are obtained by spin-coating, followed by baking at less than 200°C temperatures. The wet chemical etch rate for organosilica is 200 times faster than that for thermally grown SiO2. The etch rate, including the physical sputter effect in a plasma, is a little more than twice that. The organosilica etch rate ratios to organic resist materials show an accurate pattern transfer for reactive sputter etching. The organosilica is also applicable to the intermediate layer in the tri-level resist process.