Electrically pumped 10 Gbit/s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region

The authors report an electrically pumped MOVPE-grown VCSEL on GaAs substrate with a GaInNAs active region emitting singlemode at 1293 nm with record characteristics. Continuous wave output power at room temperature with 1.4 mW, a threshold current of 1.25 mA and a data transmission rate of 10 Gbit/s has been realised.