Optical Quality Dependence on Growth Rate for Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs

GaInNAs/GaAs quantum wells with indium compositions of up to 39% were grown by metalorganic chemical vapor deposition under different growth rates. We found that the growth rate (∼1 µm/h) critically affects the optical quality of GaInNAs/GaAs quantum wells and that a low growth rate (∼0.2 µm/h) is preferable for increasing nitrogen compositions.