Electrical stress effects on polycrystalline silicon thin film transistors (poly-Si TFTs) fabricated by metal induced lateral crystallization at 500° C have been investigated. Leakage current decreased by four orders of magnitude after the electrical stress in both n-channel TFTs and p-channel TFTs. It turned out that the electrical stress between the drain and source was more effective than that between the gate and source. Polarity of the electrical stress turned out to be also important for depression of the leakage current.
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Ihn et al. (1997) studied this question.
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