An advanced analog/digital bipolar VLSI technology that combines on the same chip 2-ns 10K I2L gates with 1K analog devices is proposed. The new technology, called high-density integration technology-2 (HIT-2), is based on a new structure concept that consists of three major techniques: shallow grooved-isolation, I2L active layer etching, and I2L current gain increase. I2L circuits with 80-MHz maximum toggle frequency have developed compatibly with n-p-n transistors having a BVCEOof more than 10 V and an fTof 5 GHz, and lateral p-n-p transistors having an fTof 150 MHz.
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Washio et al. (1985) studied this question.
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