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The influence of the sputtering conditions on the sheet resistance, electrochemical behaviour, and on the chemical composition of transparent indium–tin oxide electrodes is investigated. It is shown that the optimal annealing temperature for the indium–tin oxide layers is 300°C. By all experiments a significant difference is found between layer compositions of electrodes and target composition of indium and tin. The results show that the layers are homogeneous and have a good long-time stability for electrochemical experiments.
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Hennig et al. (1982) studied this question.
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