Inter-sub-band absorption is observed in InP/In 0.53 Ga 0.47 As modulation-doped quantum wells. A multiple internal reflection geometry is used to demonstrate a strong absorption which only occurs for p-polarised light. A quantitative analysis is performed on the weaker absorption observed with a single pass of light incident at the Brewster angle. The energy of the inter-sub-band transition is found to agree with an effective-mass model. The effects of free carriers and built in electric fields on the inter-sub-band absorption are discussed.
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Kane et al. (1988) studied this question.
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