Domain tailored ferroelectric crystals are fascinating functional materials. This needs a simple and highly productive domain engineering method at the micro- and nano-scales. In this letter, penetrating dot domain of top and bottom diameters of 360 and 310 nm, respectively, in 100-µm-thick stoichiometric LiNbO3 by focused ion beam domain engineering has been demonstrated. Surface structures of the same size can be fabricated by combining this focused ion beam domain engineering with HF-selective etching.
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Li et al. (2005) studied this question.
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