Resistive switching behavior of photochemical activation solution-processed thin films at low temperatures for flexible memristor applications

This study explores deep ultraviolet photochemically activated solution-processed metal-oxide thin films at room temperature for fabrication of flexible memristor active resistive layers. An annealing treatment was not required during the process. Solution processed undoped and Mn-doped ZnO thin films served as active layers in the resistive random access memory structure, prepared at 145 °C. The carrier transports in high and low electrical fields were dominated by Frenkel–Poole emission and thermionic emission, respectively. The trap energy level, which originated primarily from V o or the singly charged oxygen vacancy, was calculated at 0.49 eV. A flexible structure consisting of Ag/DUV-ZnO/indium tin oxide/polyethylene terephthalate was fabricated successfully and its mechanical performance was investigated.