⌘+K

Pulse Explore Communities Researchers Journals

Home Communities Explore

July 1, 1987Journal of Vacuum Science & Technology B Microelectronics Processing and PhenomenaOpen Access

Summary Abstract: A nondestructive synchrotron radiation photoemission study of the band lineup for buried GaSb–AlSb interfaces

David W. Niles Billy Lai J. T. McKinley G. Margaritondo Garth Wells F. Cerrina G. J. Gualtieri G. P. Schwartz

View Full Paper

Ask AI

Bookmark

Share

No abstract yet

We only have this paper's title and publication details.

Read it at the source→

Ask about this paper

Answers are grounded in this paper and cite their sources.

Ask your own question…

Abstract

Lse

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Niles et al. (1987) studied this question.

synapsesocial.com/papers/6aa2f254dd6ce9c234241085 https://doi.org/10.1116/1.583821

View Full Paper

Ask AI

Bookmark

Share

Keep reading

Synapse has enriched 10 related papers. Consider them for comparative context:

1Rapid thermal processing systems: A review with emphasis on temperature controlJournal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990
2An analysis of polarization mixing errors in distance measuring interferometersJournal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990
3Development of centrally controlled synchrotron radiation lithography beamline systemJournal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990
4Parametric modeling of focused ion beam induced etchingJournal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990
5Design of a high resolution focused ion beam system using liquid metal ion sourceJournal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990
6Double 15-nm-wide metal gates 10 nm apart and 70 nm thick on GaAsJournal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990
7Study of sidewall passivation and microscopic silicon roughness phenomena in chlorine-based reactive ion etching of silicon trenchesJournal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990
8An error measure for dose correction in e-beam nanolithographyJournal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990
9Electron beam/optical intralevel mix-and-match lithography for deep submicron device fabricationJournal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990
10A unified line-of-sight model of deposition in rectangular trenchesJournal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1990

JMore from Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

More from University of Wisconsin–Madison

More from AT&T (United States)