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November 1, 1985IEEE Electron Device Letters

Formation of TiN/TiSi2/p+-Si/n-Si by rapid thermal annealing (RTA) silicon implanted with boron through titanium

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Authors

MDM. DelfinoFundación Ciencias Exactas y NaturalesEBE. K. BroadbentPhilips (Finland)AMA. E. MorganPhilips (Finland)

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Delfino et al. (1985) studied this question.

synapsesocial.com/papers/6aa303ea4eb0fe97dac228e8https://doi.org/10.1109/edl.1985.26241
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  1. 1Boron ion implantation in silicon through selectively deposited tungsten films1985 · 3 citations