Model describing phosphorus diffusion gettering of transition elements in silicon

We give experimental evidence for cobalt in silicon that each of the processes defining phosphorus diffusion gettering (PDG), i.e., (1) P doping by in-diffusion and (2) SiO2 growth, achieves moderate gettering, while the cooperation of the two processes leads to strong gettering of cobalt. In a tentative model, gettering is attributed to the coupling between local currents of silicon self-interstitials, which are generated during PDG, and 3d impurities on substitutional sites.