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Thin Ti films have been deposited on Si 〈100〉 substrates and annealed to form silicide compounds. The annealings were performed in a vacuum rapid isothermal annealing system or in an UHV chamber. Raman spectra were obtained after various processing stages or in situ in the UHV system. The results indicate the simultaneous formation of crystalline Ti2O3 and a Ti silicide tentatively identified as TiSi. Higher temperature annealing to greater than 750 °C leads to the formation of TiSi2 and the disappearance of the Ti2O3 signal.
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Nemanich et al. (1985) studied this question.
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