1.55 μ m GaInNAs resonant-cavity-enhanced photodetector grown on GaAs

We report the design, growth, fabrication, and characterization of a GaAs-based resonant-cavity-enhanced (RCE) GaInNAs photodetector operating at 1.55μm. The structure of the device was designed using a transfer-matrix method (TMM). By optimizing the molecular-beam epitaxy growth conditions, six GaInNAs quantum wells were used as the absorption layers. Twenty-five (25)- and 9-pair GaAs∕AlAs-distributed Bragg reflectors were grown as the bottom and top mirrors. At 1.55μm, a quantum efficiency of 33% with a full width at half maximum of 10nm was obtained. The dark current density was 3×10−7A∕cm2 at a bias of 0V and 4.3×10−5A∕cm2 at a reverse bias of 5V. The primary time response measurement shows that the device has a rise time of less than 800ps.