Low threshold 650 nm band real refractive index-guidedAlGaInP laser diodes with strain-compensated MQW active layer

650 nm band real refractive index-guided AlGaInP laser diodes with a strain-compensated MQW active layer have been successfully fabricated. A threshold current of 9 mA, which is the lowest ever reported, was achieved and 5 mW operation was obtained up to 120°C. These lasers have been operated for > 3000 h under 5 mW at 90°C.