AlGaInP strained multiple-quantum-well visible laser diodes ( lambda /sub L/>or=630 nm band) with a multiquantum barrier grown on misoriented substrates

Optimization of the misorientation angle of GaAs substrates to prepare multiple quantum wells (MQWS) and multiple quantum barriers (MQBs) with abrupt barrier-well interfaces is reported. The characteristics of AlGaInP strained MQW laser diodes incorporating an MQB grown on misoriented substrates are also investigated, with the aim of developing high-performance 630-nm laser diodes. MQW and MQB with homogeneous periodicity and abrupt barrier-well interfaces were obtained using