We report the first observation of a two-dimensional electron gas at the interface of an InGaP/GaAs heterojunction. The closely lattice-matched (δa/a≃5×10−4) epitaxial layers of InGaP were grown by vapour levitation epitaxy using a chloride transport technique with a resulting interface sheet carrier concentration of 7×1011 cm−2.
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Cox et al. (1986) studied this question.